IGBT - IXSH15N120BD1 HIGH VOLTAGE IGBT + DIODE 1200V 30A
Brand: GERMANY
Group: Semiconductor
Subgroup: IGBT
Model / Brand: IXYS
Stock: Please Call.
قیمت: 850,000 Tomman
Keywords: IXSH15N120BD1
Detail:
Maximum power dissipation (Pc) of IGBT transistor, W:
Maximum collector-emitter voltage |Uce|, V: 1200V
Collector-emitter saturation voltage |Ucesat|, V: 3.4V
Maximum gate-emitter voltage |Ueg|, V:
Maximum collector current |Ic|, A: 30A
Maximum junction temperature (Tj), °C:
Rise time, nS: 150
Maximum collector capacity (Cc), pF:
Package: TO247